25 nm CMOS Omega FETs

By Fu-Liang Yang, Hao-Yu Chen, Fang-Cheng Chen, Cheng-Chuan Huang, Chang-Yun Chang, H.-K. Chiu, Chi-Chuang Lee, Chi-Chun Chen, Huan-Tsung Huang, Chih-Jian Chen and 4 more. Digest. International Electron Devices Meeting,, 2002

181 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a9abd59a76950c8303d9fac098fe1861d4c74a3e

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In Electrical and Electronic Engineering

1. Navab Singh
2. A. Dixit

Citations in the corpus

• Analysis of the parasitic S/D resistance in multiple-gate FETs (2005, methodology): “N-channel Omega-FETs [7] have been fabricated on sil-”
• Impact of Line-Edge Roughness on FinFET Matching Performance (2007, background): “, when short-channel FinFETs are designed with narrow fins [10].”
• Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective (2006, unknown): “are emerging as strong candidates [1]–[3].”
• High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices (2006, background): “Among the many innovative approaches, double-gated FinFET [3], [4], tri-gated [5], Π-gated [6], Ω-gated [7], nanowire body [8]–[11], and gateall-around (GAA) [12]–[14] MOSFETs have attracted much”