Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective
By V. Subramanian, B. Parvais, J. Borremans, A. Mercha, D. Linten, P. Wambacq, J. Loo, M. Dehan, C. Gustin, N. Collaert and 9 more. IEEE Transactions on Electron Devices, 2006
150 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/87b06b3cbe364f1efee4db96a9d65f6387154f81
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In Electrical and Electronic Engineering
- Isabelle Ferain
- C. Colinge
- Ran Yan
- Chi-Woo Lee
- Jean-Pierre Colinge
- Te-Kuang Chiang
- Suresh Gundapaneni
- Anil Kottantharayil
Citations in the corpus
- Junctionless Multiple-Gate Transistors for Analog Applications (2011, background): “As several recent papers about IM multiple gate devices have considered lightly doped transistors (NA around 10(15) cm−3) as a good technological alternative [16], [20], [22], [27], IM devices with channel doping concentrations of 10(15) cm−3 and 10(18) cm−3 were simulated.”
- Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors (2011, background): “The excellent linearity properties and the low value of the body factor of multigate FETs also make them good candidates for mixed-mode and analog circuit application”