Nonvolatile Switching in Graphene Field-Effect Devices

By T. Echtermeyer, M. Lemme, M. Baus, B. Szafranek, A.K. Geim, H. Kurz. IEEE Electron Device Letters, 2008

150 citations recorded by the source corpus.

The absence of a band gap in graphene restricts its straightforward application as a channel material in field-effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field-effect devices (FEDs) by controlled structural modification of the graphene channel itself. The conductance in the FEDs is switched between a conductive ldquoon-staterdquo and an insulating ldquooff-staterdquo with more than six orders of magnitude difference in conductance. Above a critical value of an electric field applied to the FED gate under certain environmental conditions, a chemical modification takes place to form insulating graphene derivatives. The effect can be reversed by electrical fields of opposite polarity or short current pulses to recover the initial state. These reversible switches could potentially be applied to nonvolatile memories and novel neuromorphic processing concepts.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/17c22ece7dd0f3a73a17d8acb63639234fb7b413

How researchers see this paper

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In Electrical and Electronic Engineering

1. G. Giavaras
2. Franco Nori
3. Y. Bliokh
4. Jannik C. Meyer
5. V. Freilikher
6. A. Rozhkov

In Materials Chemistry

1. G. Giavaras
2. Franco Nori
3. Y. Bliokh
4. Jannik C. Meyer
5. V. Freilikher
6. S. Roth
7. H. Park
8. V. Skákalová

Citations in the corpus

• Growth and properties of few-layer graphene prepared by chemical vapor deposition (2009, background): “CVD and carbon segregation participate in the growth process and are responsible for the different structural formations found.”
• Electronic properties of mesoscopic graphene structures: Charge confinement and control of spin and charge transport (2011, methodology): “[168] a room-temperature-operated switch demonstrating an on/off ratio exceeding 106 was described.”