Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

By J. Moon, D. Curtis, M. Hu, D. Wong, C. Mcguire, Paul M. Campbell, G. Jernigan, J. Tedesco, B. Vanmil, R. Myers-Ward and 2 more. IEEE Electron Device Letters, 2009

348 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/877cadc67888c6343f32c8cd6ccdbf36fef3af89

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In Atomic and Molecular Physics, and Optics

1. Phaedon Avouris
2. Ian F. Akyildiz
3. Josep Miquel Jornet
4. V. Perebeinos
5. Yu-ming Lin
6. Tomás Palacios
7. Jing Kong
8. Fengnian Xia

In Materials Chemistry

1. Phaedon Avouris
2. K. Novoselov
3. Fengnian Xia
4. V. Perebeinos
5. Josep Miquel Jornet
6. Ian F. Akyildiz
7. Yu-ming Lin
8. Jing Kong

Citations in the corpus

• Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance (2011, background): “Only epitaxial SiC has demonstrated radio-frequency (RF) performance [2], [3].”
• The origins and limits of metal-graphene junction resistance. (2011, background): “At the diffusive limit, equation (3) and I1⁄4 sdV(x)/dx (where s is Boltzmann conductivity) can be rearranged to give”
• Electromagnetic wireless nanosensor networks (2010, background): “Convenience and seamless deployment will lead us to the integration and use of nanosensor devices in every single device.”