Resistivity of Graphene Nanoribbon Interconnects

By R. Murali, K. Brenner, Yinxiao Yang, T. Beck, James D. Meindl. IEEE Electron Device Letters, 2009

188 citations recorded by the source corpus.

Graphene nanoribbon (GNR) interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given linewidth(18 nm < W< 52 nm) is about three times that of a Cu wire, whereas the best GNR has a resistivity that is comparable to that of Cu. The conductivity is found to be limited by impurity scattering as well as line-edge roughness scattering; as a result, the best reported GNR resistivity is three times the limit imposed by substrate phonon scattering. This letter reveals that even moderate-quality graphene nanowires have the potential to outperform Cu for use as on-chip interconnects.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4407ae01ce1a74b5bc6c397f70220b8e21664f5f

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Citations in the corpus

Impact of Size Effect on Graphene Nanoribbon Transport (2010, background): “Graphene has been found to have a variety of interesting and superior properties such as high mobility[1], high thermal conductivity[2], width-dependent bandgap[3], and resistivity better than equivalent Cu wires[4].”
The role of contact resistance in graphene field-effect devices (2017, background): “Graphene extraordinary properties have been already exploited for several applications such as gas sensors [15], photodetectors [16, 17], solar cells [18], heterojunctions [19], field-effect transistors [20,21], transparent conductors for touch screens [22,23], electromagnetic interference shielding”
Compact Physics-Based Circuit Models for Graphene Nanoribbon Interconnects (2009, background): “Because of the large MFP of electrons in graphene and its large current capacity (5−20 × 10 8 A/cm 2 [ 16 ]), GNRs can”
Design of a Reconfigurable MIMO System for THz Communications Based on Graphene Antennas (2014, background): “For example, for field-effect transistors [2] and interconnects [3], high speed is achieved due to the special energy band structure and ultrahigh electron mobility in graphene [4], [5].”
Fully Integrated Graphene and Carbon Nanotube Interconnects for Gigahertz High-Speed CMOS Electronics (2010, background): “to 50 nm is smaller than 10 μΩ · cm, which is comparable with copper wires with the same physical dimensions [17].”
Graphene synthesis, characterization and its applications in nanophotonics, nanoelectronics, and nanosensing (2015, background): “Graphene’s intrinsic carrier mobility at room temperature is much higher than silicon and other III–V semiconductors [8, 10, 27, 35].”
Signal Transmission Analysis of Multilayer Graphene Nano-Ribbon (MLGNR) Interconnects (2012, background): “MORE recently, graphene has drawn much attention in scientific community [1]–[4] due to its extraordinary properties, such as extreme high current carrying capability (5 ∼20 × 108 A/cm2) [5], electrical conductivity [6], thermal conductivity [7], and mechanical strength, etc.”