Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method

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A Review on the Reliability of GaN-Based LEDs (2008, background): “self-heating (estimated by means of thermal maps, see [15]) is limited to 35 ◦C with respect to RT, which is low enough to prevent dopant instabilities [16], [17].”
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs (2010, methodology): “The devices were submitted to stress at constant current level (current density in the range of 35–85 A/cm(2)) at room temperature (RT): during stress, junction temperature (evaluated by means of the method proposed in [28]) never exceeded 100 ◦C.”
Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact (2010, background): “junction temperature was determined by the variation of peak wavelength or forward voltage [111], [112] indicates that the low turn-on voltage and the series resistance of PI LEDs could”
Accelerated Life Test of High Brightness Light Emitting Diodes (2008, methodology): “of the temperature, we used electrical characterization based on forward voltage technique, which is well described by several authors [9].”