Comparative Performance Analysis of the Dielectrically Modulated Full- Gate and Short-Gate Tunnel FET-Based Biosensors
By S. Kanungo, Sanatan Chattopadhyay, Partha Sarathi Gupta, Hafizur Rahaman. IEEE Transactions on Electron Devices, 2015
179 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/ec451cd1db7f13d52fdfb27650c088bbdb529fc3
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In Biomedical Engineering
In Electrical and Electronic Engineering
- Dharmendra Singh Yadav
- Partha Sarathi Gupta
- Dheeraj Sharma
- Sanatan Chattopadhyay
- S. Kanungo
- Hafizur Rahaman
Citations in the corpus
- A Charge-Plasma-Based Dielectric-Modulated Junctionless TFET for Biosensor Label-Free Detection (2017, background): “The significant shift in Ids sensitivity along the gate bias denotes the capability of DM-JLTFET to sense the charge in the cavity [14], [23].”
- Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor (2017, background): “The sensitivity of drain current for LB and VB is defined as [10], [22]”
- Study and Analysis of the Effects of SiGe Source and Pocket-Doped Channel on Sensing Performance of Dielectrically Modulated Tunnel FET-Based Biosensors (2016, methodology): “However, until now, this aspect of detection in the DMTFET remained largely unaddressed [21]–[23].”