Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors

By D. Jin, Jesús A. del Alamo. IEEE Transactions on Electron Devices, 2013

226 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/94639cbe9e7857d588c764d25944c556a983670c

How researchers see this paper

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In Condensed Matter Physics

1. Shu Yang
2. Kuang Sheng
3. Shaowen Han
4. Kevin J. Chen

In Electrical and Electronic Engineering

1. Shu Yang
2. Kuang Sheng
3. Kevin J. Chen
4. Shaowen Han

In Electronic, Optical and Magnetic Materials

1. Kevin J. Chen
2. Shu Yang
3. Kuang Sheng
4. Shaowen Han

Citations in the corpus

• Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, methodology): “Jin and Alamo [71] have mapped out various surface/border traps over a broad timescale with waferlevel pulsed I–”
• Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses (2019, unknown): “, [7], [8]).”