Alteration of Cu conductivity in the size effect regime

By S. Rossnagel, T. Kuan. 2004

437 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/905ebd5481e7b79cf9db1d16bccb38ea93a71de4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. James D. Meindl
2. A. Naeemi
3. Yehia Massoud
4. Jing Kong
5. H. Philip Wong
6. Arthur Nieuwoudt
7. Bipul Chandra Paul

In Electrical and Electronic Engineering

1. A. Naeemi
2. James D. Meindl
3. Xiaohua Du
4. H. Philip Wong
5. S. George
6. Yehia Massoud
7. Arthur Nieuwoudt
8. Bipul Chandra Paul

In Electronic, Optical and Magnetic Materials

1. James D. Meindl
2. A. Naeemi
3. S. George
4. Yehia Massoud
5. Arthur Nieuwoudt

Citations in the corpus

• Conductance Modeling for Graphene Nanoribbon (GNR) Interconnects (2007, background): “3 as average values of the reported measured data [11], [12].”
• Thickness dependence of sensor response for CO gas sensing by tin oxide films grown using atomic layer deposition (2008, background): “In addition, other mechanisms such as surface electron scattering and percolation effects are expected to increase the resistance of ultrathin films [10, 56 ].”
• Design and Performance Modeling for Single-Walled Carbon Nanotubes as Local, Semiglobal, and Global Interconnects in Gigascale Integrated Systems (2007, background): “25, which are taken as average values reported or used in various references [35], [40].”
• Size-Dependent Resistivity in Nanoscale Interconnects (2009, background): “Onecanfitsuchresultsusingtheformalismsdiscussedabove.”
• Fully Integrated Graphene and Carbon Nanotube Interconnects for Gigahertz High-Speed CMOS Electronics (2010, background): “Increased wire resistivity leads to increased Joule heating and degraded electromigration lifetime, which result in decreased maximum allowed current density in copper wires [2]–[4].”
• Evaluating the impact of resistance in carbon nanotube bundles for VLSI interconnect using diameter-dependent modeling techniques (2006, methodology): “In addition, we also plot the resistivity of bulk copper and predicted resistivity of copper wires with minimum pitch in 45- and 22-nm process technologies [2].”
• Performance comparison between carbon nanotube and copper interconnects for gigascale integration (GSI) (2005, background): “The results offer important guidance regarding the nature of carbon nanotube technology development needed for improving interconnect performance.”