Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology

By Wim Bogaerts, R. Baets, Pieter Dumon, Vincent Wiaux, S. Beckx, D. Taillaert, B. Luyssaert, J. V. Campenhout, Peter Bienstman, D. van Thourhout. Journal of Lightwave Technology, 2005

966 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d5953341c0a05d888f0359363b7f5d68e9db246e

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In Atomic and Molecular Physics, and Optics

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Citations in the corpus

Subnanometer Linewidth Uniformity in Silicon Nanophotonic Waveguide Devices Using CMOS Fabrication Technology (2010, methodology): “To estimate the influence of the fabrication process, we fabricated devices using the same mask but using a 248 nm optical lithography process and a previously developed dry etch process [ 16 ].”
Nanolasers Grown on Silicon (2011, methodology): “Nanopillar lasers are thus compatible with the existing coupling schemes used for microdisks and ring resonator”
Silicon-on-Insulator Spectral Filters Fabricated With CMOS Technology (2010, methodology): “This uniformity is much better than what can be achieved with previous generations of optical lithography, such as 248 nm deep UV lithography [1].”
Fabrication-Tolerant Waveguide Chirped Grating Coupler for Coupling to a Perfectly Vertical Optical Fiber (2008, methodology): “The chirped grating coupler was fabricated on an SOI wafer using 193-nm optical lithography at IMEC [1] with a 220-nm top silicon layer and a 2- m-thick buried oxide.”
Compact Focusing Grating Couplers for Silicon-on-Insulator Integrated Circuits (2007, methodology): “The SOI-structures were fabricated using 248-nm-deep UV lithography and inductively coupled plasma–reactive ion etching (ICP-RIE) dry etching [8].”
Efficient silicon-on-insulator fiber coupler fabricated using 248-nm-deep UV lithography (2005, methodology): “Moreover, one can use the standard complementary metal–oxide–semiconductor (CMOS) technology to mass manufacture these optical devices [1].”
Compact Wavelength-Selective Functions in Silicon-on-Insulator Photonic Wires (2006, methodology): “However, today’s commercially available devices integrate only a few functions onto a chip, because individual elements have a length scale from several hundred micrometers up to centimeters.”
Planar Concave Grating Demultiplexer Fabricated on a Nanophotonic Silicon-on-Insulator Platform (2007, methodology): “The fabrication process is described in detail in [ 9 ] and [15].”