Compact Wavelength-Selective Functions in Silicon-on-Insulator Photonic Wires

By Wim Bogaerts, Pieter Dumon, D. van Thourhout, D. Taillaert, P. Jaenen, J. Wouters, S. Beckx, Vincent Wiaux, R. Baets. IEEE Journal of Selected Topics in Quantum Electronics, 2006

349 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1ee6ffc21b321edafe5e2299b3d9258aaed36504

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

Citations in the corpus

Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon (2014, neutral): “To reduce the insertion losses o f the filter and minimize the reflections, the tapers between the wa veguides and the slab propagation region are etched in two steps [23].”
All-optical high-speed signal processing with silicon–organic hybrid slot waveguides (2009, methodology): “The slotted waveguides were produced on a 200-mm CMOS line using 193-nm deep-ultraviolet (DUV) lithography and chlorine-based reactive ion etchin”
Nonlinear silicon photonics (2010, background): “This success is partially due to sophisticated technical solutions, and in particular has been enabled by progress in the fabrication of nanophotonic device”
Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits (2017, positive): “This results in improved crosstalk for SOIbased AWGs and makes them a viable option for applications requiring large channel spacing as demonstrated in [49], where a 16 channel SOI-based AWG with 200 GHz channel spacing has shown a crosstalk of ∼ −20 dB at a wavelength of 1.”
Silicon-based on-chip multiplexing technologies and devices for Peta-bit optical interconnects (2014, background): “With the current fabrication technologies, the roughness for the core sidewall of SOI nanowires is about 2 nm [16] and the fluctuation due to this core-width variation can be reduced by enlarging the core width in the straight regions [23].”
Planar Concave Grating Demultiplexer Fabricated on a Nanophotonic Silicon-on-Insulator Platform (2007, methodology): “Ultracompact AWGs have already been demonstrated on a nanophotonic SOI platform [8], [10], [11].”
Silicon-on-Insulator Spectral Filters Fabricated With CMOS Technology (2010, methodology): “In these delay lines, the wider width also reduces the phase errors introduced by sidewall roughness and nonuniformity [ 11 ].”
Compact Single-Mode Silicon Hybrid Rib/Strip Waveguide With Adiabatic Bends (2011, methodology): “Also, the small-core waveguides are also much more sensitive to small dimensional variations, which can introduce phase errors in the long waveguides [ 5 ], [6].”