High-K materials and metal gates for CMOS applications

By John Robertson, Robert M. Wallace. 2015

712 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a56c50b0068efa256bc392aa40ec34f8a23b77f2

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Daljeet Kaur
2. Tripti Sharma
3. C. Madhu
4. Amardeep Bharti

In Electrical and Electronic Engineering

1. Daljeet Kaur
2. Tripti Sharma
3. C. Madhu
4. Amardeep Bharti

Citations in the corpus

• Electric double-layer transistors: a review of recent progress (2015, neutral): “2 nm) has been developed, while it results in high gate leakage current due to direct tunneling of electrons through the SiO2, exceeding 1 A/cm 2 [8].”
• Dielectric Properties of ZnO-Based Nanocomposites and Their Potential Applications (2021, methodology): “High-k materials are used as gate dielectrics in MOS transistors, memory cells, capacitors, supercapacitors [2, 3], and so forth, whereas low-k materials find their applications in electrical insulation and high-speed integrated circuits [4].”
• Electronic properties of hafnium oxide: A contribution from defects and traps (2016, neutral): “Presently, it is widely recognized that the most thermodynamically favourable defects in hafnium oxide are oxygen vacancies (VO) [1,4,5,36].”