Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

By A. Lelis, R. Green, D. Habersat, M. El. IEEE Transactions on Electron Devices, 2015

420 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/7aad291e77a0fd50bbf59274c790ed43dfb739f2

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In Electrical and Electronic Engineering

1. Tibor Grasser
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4. Hans Reisinger

Citations in the corpus

• Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability (2019, background): “Another peculiarity that is only visible at short measurement delays (≤1 ms) is that the measured Vth at lower temperatures is higher than at high temperatures [45], [50].”
• Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling (2019, background): “For SiC devices, the SiC/SiO2 interface can cause reliability problems and several studies have demonstrated the gate threshold voltage instability in SiC devices [5], [6].”