Diamond as an electronic material
By C. Wort, R. Balmer. 2008
595 citations recorded by the source corpus.
The combination of extreme electronic and thermal properties found in synthetic diamond produced by chemical vapor deposition (CVD) is raising considerable excitement over its potential use as a semiconductor material. Experimental studies have demonstrated charge-carrier mobilities 1 of >3000 cm2V−1s−1 and thermal conductivities 2 >2000 Wm−1K−1. The material has been predicted to have a breakdown field strength in excess of 10 MVcm−1. These figures suggest that, providing a range of technical challenges can be overcome, diamond would be particularly well suited to operation as a semiconductor material wherever high frequencies, high powers, high temperatures or high voltages are required.
Subfields: Geophysics, Materials Chemistry, Mechanics of Materials
View Paper: https://www.semanticscholar.org/paper/7234527c823450192f8a843c543c4de1954c5a9f
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In Geophysics
In Materials Chemistry
Citations in the corpus
- Surface transfer doping of diamond: A review (2021, background): “The carbon allotrope diamond possesses a remarkable amalgamation of properties, making it an ‘extreme’ material, highly appealing for a wide range of applications [1].”
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “extremely expensive [3], [10], [11], the low-cost melt growth technologies of β-Ga2O3 crystal make it more attractive.”
- Quantum nanophotonics in diamond [Invited] (2016, background): “Diamond’s exceptional combination of a wide electronic bandgap, high mechanical strength, high thermal conductivity, and large hole mobility has made it an attractive material for high frequency, power, temperature, and voltage applications such as power electronics [44,45].”