High RF performance TSV silicon carrier for high frequency application

By S. W. Ho, S. Yoon, Qiaoer Zhou, K. Pasad, V. Kripesh, John H. Lau. Electronic Components and Technology Conference, 2008

142 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6e5e0176a890893764f4113f38a035bceabc7af9

How researchers see this paper

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In Electrical and Electronic Engineering

1. John H. Lau
2. H. Henke

Citations in the corpus

• TSV manufacturing yield and hidden costs for 3D IC integration (2010, background): “In the development of 3D IC integration, at least the following must be noted and understood: [1-41]”
• High-Frequency Modeling of TSVs for 3-D Chip Integration and Silicon Interposers Considering Skin-Effect, Dielectric Quasi-TEM and Slow-Wave Modes (2011, methodology): “In [40] and [41], the concept of coaxial TSVs was introduced and demonstrated up to 40 GHz.”
• Thermal management of 3D IC integration with TSV (through silicon via) (2009, background): “There are many critical issues of 3D IC integration [1-14], e.”