Comparison of Wide-Bandgap Semiconductors for Power Electronics Applications

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A review on thermoelectric renewable energy: Principle parameters that affect their performance (2014, background): “To move to the conduction band, they require an amount of energy Eg1⁄4Ec – Ev, where Eg is the band gap [109].”
Investigation of Gallium Nitride Devices in High-Frequency LLC Resonant Converters (2017, background): “They are promising candidates for the future high-efficiency and high-density power converters [1], [2].”
Die Attach Materials for High Temperature Applications: A Review (2011, background): “A report by Ozpineci and Tolbert [12] lists the major advantages of these wide band gap materials which make them so useful for power device manufacturing.”
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges (2016, unknown): “voltage and current capabilities [1]–[5].”
COSS Losses in 600 V GaN Power Semiconductors in Soft-Switched, High- and Very-High-Frequency Power Converters (2018, background): “power devices outperform their silicon counterparts [4], making them attractive for these HF and VHF soft-switching converters.”