Controlling the Synaptic Plasticity of a Cu2S Gap‐Type Atomic Switch
By Alpana Nayak, T. Ohno, Tohru Tsuruoka, Kazuya Terabe, Tsuyoshi Hasegawa, J. Gimzewski, Masakazu Aono. 2012
160 citations recorded by the source corpus.
Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/61fa6e88a8fc7504f2648b76e548f0a41e7ef8e9
How researchers see this paper
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In Cellular and Molecular Neuroscience
In Electrical and Electronic Engineering
- Shimeng Yu
- H. Philip Wong
- Duygu Kuzum
- Daniele Ielmini
- Ximeng Guan
- Pai-Yu Chen
- Ilia Valov
- Yurii A. Vlasov
Citations in the corpus
- A Survey of Neuromorphic Computing and Neural Networks in Hardware (2017, unknown): “A review of different types of atomic switches for neuromorphic systems is given in [2078], but common materials for atomic switches are Ag2S [2072], [2073], [2076], Cu2S [2074], Ta2O5 [2077], and WO3 – x [2079].”
- Synaptic electronics: materials, devices and applications (2013, background): “The same group later reported similar synaptic behavior in a Cu/Cu2S/nanogap/Pt synaptic device [73].”
- Neuro-Inspired Computing With Emerging Nonvolatile Memorys (2018, methodology): “…and spike-timing-dependent plasticity have been emulated in various devices, including Ag/Ag 2 S-based CBRAM [56], Cu/Cu 2 S-based CBRAM [57], Ag/GeS 2 -based CBRAM [58], Ag/Ge 30 Se 70 -based CBRAM [59], Ag/SiO x N y -based CBRAM [60], TiO x -based OxRAM [61], HfO x -based OxRAM [55],…”