Bottom-up approach for carbon nanotube interconnects
By Jun Li, Q. Ye, A. Cassell, H. Ng, R. Stevens, Jie Han, M. Meyyappan. 2003
489 citations recorded by the source corpus.
We report a bottom-up approach to integrate multiwalled carbon nanotubes (MWNTs) into multilevel interconnects in silicon integrated-circuit manufacturing. MWNTs are grown vertically from patterned catalyst spots using plasma-enhanced chemical vapor deposition. We demonstrate the capability to grow aligned structures ranging from a single tube to forest-like arrays at desired locations. SiO2 is deposited to encapsulate each nanotube and the substrate, followed by a mechanical polishing process for planarization. MWNTs retain their integrity and demonstrate electrical properties consistent with their original structure.
Subfields: Biomedical Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/5fad8ea7ee10b8566f88aefb01be39d07549381e
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Biomedical Engineering
- Chuan Xu
- Hong Li
- Kaustav Banerjee
- Navin Srivastava
- Neophytos Neophytou
- Dmitri E. Nikonov
- Mark S. Lundstrom
- K. Rumpf
In Materials Chemistry
- Hong Li
- Kaustav Banerjee
- Chuan Xu
- Navin Srivastava
- Dmitri E. Nikonov
- Franz Kreupl
- Mark S. Lundstrom
- Gianluca Fiori
Citations in the corpus
- On the Applicability of Single-Walled Carbon Nanotubes as VLSI Interconnects (2009, background): “Metallic CNTs have aroused a lot of interest as VLSI interconnects of the future [8]–[11], [19]–[22], because of their extremely desirable electrical and thermal properties.”
- Performance analysis of carbon nanotube interconnects for VLSI applications (2005, background): “In order to alleviate such problems, changes in the material used for on-chip interconnections have been sought even in earlier technology generations, for example the transition from aluminum to copper some years back.”
- Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects (2009, methodology): ““Bottom-up” approach has been proposed in [27] as shown in Fig.”
- Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors (2007, background): “Prototype structures showing good performance for transistors [4], interconnects [5], electromechanical switches [6], infrared emitters [2], [3], and biosensors [7] have been demonstrated.”