Plasma-assisted InP-to-Si low temperature wafer bonding

By D. Pasquariello, K. Hjort. 2002

261 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/583ec3bbfc228f1e2c8f8534f410fc1d7cdbf35a

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In Electrical and Electronic Engineering

1. John E. Bowers
2. Gunther Roelkens
3. Di Liang
4. Mircea Guina
5. C. Wong
6. Antti Härkönen
7. R. Baets
8. A. Rantamäki

Citations in the corpus

• Hybrid Integrated Platforms for Silicon Photonics (2010, methodology): “If surface RMS roughness exceeds 1 nm, which is believed to be the maximum surface roughness for strong direct wafer bonding in the literature [16], chemical mechanical polishing (CMP) is routinely employed to improve surface topography [17].”
• Heterogeneously Integrated InP\/Silicon Photonics: Fabricating Fully Functional Transceivers (2019, unknown): “[19] and integrates iii/V compound semiconductor material onto an Si photonic chip using plasma-assisted bonding [20] (Figure 2).”
• Optically pumped VECSELs: review of technology and progress (2017, background): “In addition, the use of monolayers and/or hydrophilic dielectric layers can relax the requirements for surface smoothness of the wafers [166, 167].”
• A Hybrid AlGaInAs–Silicon Evanescent Amplifier (2007, unknown): “This III–V structure is then transferred to the patterned silicon wafer through low-temperature oxygen plasma assisted wafer bonding with 300 C annealing temperature [5].”
• Wafer bonding using microwave heating of parylene intermediate layers (2004, background): “The eutectic bonding does not require high temperature processing but it requires specific material composition such as metal alloy to achieve a low eutectic point [ 3 ].”
• Recent progress in lasers on silicon (2010, background): “This idea has been demonstrated for wafer sizes of up to 150 mm in diameter, and the photoluminescence characteristics of the bonded compound semiconductor films actually improve after bonding, probably due to the release of strain during cooling after epitaxial film growt”