Recent progress in lasers on silicon

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1.3 μm Submilliamp Threshold Quantum Dot Micro-lasers on Si (2017, neutral): “…to the historical scaling of complementary metal-oxide-semiconductor (CMOS) technology governed by Moore ’ s law, there is an enduring and increasing need for miniaturization and large-scale integration of photonic components on the silicon platform for datacom and emerging applications [1 – 6].”
Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate (2011, background): “120" language="eng" relation="no" origsrc="yes"> Incorporating photonic components into Si microelectronics has been the impetus behind the development of Si photonics for the last twenty year”
Silicon Photonic Integration Platform—Have We Found the Sweet Spot? (2014, neutral): “A wafer level approach by bonding the III-V wafer at selective areas on the SOI substrate and then proceeding with laser fabrication has also been demonstrated by a number of groups [12, 28-30].”
Advances in quantum cryptography (2019, neutral): “[297] D.”
Roadmap on silicon photonics (2016, background): “A portion of a 150 mm-diameter III–V-on-SOI wafer containing ring cavity lasers (left) and 1 cm(2) chips containing 400 micro-ring lasers (right) [15].”