The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures

By G. Liu, A. Stintz, Hua Li, T. Newell, A. L. Gray, P. Varangis, Kevin J. Malloy, L. F. Lester. IEEE Journal of Quantum Electronics, 2000

155 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/aab46ea307b4ae0671e3beaa12de269460f2ad72

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1. R.H. Wang
2. A. Stintz
3. T. Newell
4. P. Varangis
5. H. Li
6. K. Malloy
7. L. Lester

Citations in the corpus

• Room-temperature operation of InAs quantum-dash lasers on InP [001] (2001, background): “search has yielded impressive laser diode results on GaAs, including: 1) a very low room-temperature threshold current density [2]–[5]; 2) the observation of an ultra-small linewidth enhancement factor [6], [7]; and 3) the attainment of a 201-nm”