High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

By H. Y. Liu, David T. D. Childs, T. Badcock, K. Groom, I. Sellers, M. Hopkinson, Richard A. Hogg, D. Robbins, D. Mowbray, M. Skolnick. IEEE Photonics Technology Letters, 2005

132 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/27c217b327ed927c5ec4bdebb49f7cdc5504a52e

How researchers see this paper

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In Atomic and Molecular Physics, and Optics

1. Wilson Sibbett
2. M. Cataluna
3. Edik U. Rafailov

In Electrical and Electronic Engineering

1. Wilson Sibbett
2. M. Cataluna
3. Edik U. Rafailov

Citations in the corpus

• Mode-locked quantum-dot lasers (2007, background): “In fact, practical devices exhibit the predicted outstandingly low threshold”