Room-temperature operation of InAs quantum-dash lasers on InP [001]
By R.H. Wang, A. Stintz, P. Varangis, T. Newell, H. Li, K. Malloy, L. Lester. IEEE Photonics Technology Letters, 2001
225 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Spectroscopy
View Paper: https://www.semanticscholar.org/paper/b89235c3e73d194e452f09e5fa3465e61d66dc21
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Long-wavelength InP-based quantum-dash lasers (2002, background): “To get the maximum amplification the stripe geometry should be aligned perpendicular to the (0–11) direction [11].”
- Semiconductor quantum dots (2003, unknown): “However, similar InAs quantum-dot or quantumdash structures were realized on (311) and (100) oriented InP substrates, respectively [15], [ 16 ].”
- InP based lasers and optical amplifiers with wire-/dot-like active regions (2005, background): “The elongated dots are preferentially oriented in the [01̄1] direction with fluctuations in orientation and geometrical dimensions [37, 38].”
- Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m (2007, background): “InP (0 0 1) substrate with QDs grown within InGaAlAs QW structures [7], and with QD structures including InGaAlAs barriers [8], [9], or InGaAsP barriers [10], [11].”