SiC Power Devices for Microgrids

By Q. Zhang, R. Callanan, M. Das, S. Ryu, Anant K. Agarwal, J. Palmour. IEEE transactions on power electronics, 2010

168 citations recorded by the source corpus.

Subfields: Control and Systems Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d0c7505d295daea511a8c53a5f7cdeda2695161b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Hoang‐Phuong Phan
2. Sima Dimitrijev
3. Dzung Viet Dao
4. Leon M. Tolbert
5. Fei Fred Wang
6. K. Nakamura
7. Nam-Trung Nguyen
8. Zhong Du

Citations in the corpus

• Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET (2018, background): “transistors (MOSFETs) [5]–[17], bipolar junction transistors [1], and insulated-gate bipolar transistors (IGBTs) [18], [19].”
• The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review (2015, background): “4 eV in 2H-SiC, high carrier mobilities and high breakdown voltage which are all desirable properties for high-temperature and high-power applications [33], [34].”
• Practical Design and Implementation Procedure of an Interleaved Boost Converter Using SiC Diodes for PV Applications (2012, background): “SiC is classified as a wide-band-gap (WBG) material, and it is becoming the mainstream material for power semiconductors [1], [2].”