A Physical Model of High Temperature 4H-SiC MOSFETs

By S. Potbhare, N. Goldsman, A. Lelis, J. McGarrity, F. B. McLean, D. Habersat. IEEE Transactions on Electron Devices, 2008

187 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/db5d6b97027989f2b33147385439dd89d0d5c1e2

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In Electrical and Electronic Engineering

1. Zheng Chen
2. Leon M. Tolbert
3. Fei Fred Wang
4. Zhong Du
5. Keith McKenzie
6. John N. Chiasson

Citations in the corpus

• Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices (2009, methodology): “Different physics-based and behavioral device models have also been developed for SiC JFET and MOSFET [18-23].”
• Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs (2012, background): “However, we note that at large gate biases, mainly surface roughness scattering dictates mobility and on-resistance [15].”
• Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET (2018, background): “These studies focus on MOSFET channel [24], base region [25], [26], parasitic capacitance [27], interaction with external circuits [28], [29], and parameter extraction [30], [31].”