Advances and Future Prospects of Spin-Transfer Torque Random Access Memory

By Eugene Chen, Dmytro Apalkov, Z. Diao, Alexander Driskill-Smith, D. Druist, Daniel Lottis, Vladimir Nikitin, Xueti Tang, Steven Watts, Shengyuan Wang and 10 more. IEEE transactions on magnetics, 2010

362 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/4b95a8a8ed760cbde3aa3c19029864d14c3e3e56

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In Atomic and Molecular Physics, and Optics

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Citations in the corpus

Overview of emerging nonvolatile memory technologies (2014, background): “STT-MRAM is a magnetic memory technology that exerts the base platform established by an existing memory called MRAM to enable a scalable nonvolatile memory solution for advanced process nodes [92,93].”
Evaluating STT-RAM as an energy-efficient main memory alternative (2013, background): “A more detailed treatment of STT-RAM can be found in [8], [9], [15], [33], [54] , [15], [54].”
The Promise of Nanomagnetics and Spintronics for Future Logic and Universal Memory (2010, methodology): “Unlike MRAM,STT-RAMhasareadcurrentdisturbswitchingissue. This can be minimized by controlling the read current level and designing the bit with proper thermal stability [ 48 ].”
SPINDLE: SPINtronic Deep Learning Engine for large-scale neuromorphic computing (2014, background): “Spintronic memories promise high density, non-volatility, and near-zero leakage, leading to extensive research, industry prototypes, and early commercial oﬀerings in recent years [9].”
Low-power non-volatile spintronic memory: STT-RAM and beyond (2013, methodology): “In fact, magnetoresistive RAM (MRAM) has exhibited significant advantages as a fast, fairly low-power, high-endurance, radiation-resistant non-volatile memory, which can be integrated to the CMOS as a back-end of line (BEOL) process [6].”
Basic principles of STT-MRAM cell operation in memory arrays (2013, background): “As a result, Jc0 for switching into the low-resistance (parallel) state can be substantially smaller than for switching into the high-resistance antiparallel state [57–60].”
Spintronics (2015, methodology): “Figure 15 shows an example of our transient simulation waveforms of the TAS STT-MRAM [Zhao et al. 2011a].”
Relaxing non-volatility for fast and energy-efficient STT-RAM caches (2011, background): “Spin-Transfer Torque RAM (STT-RAM) is a promising NVM that is actively being developed by industry and that is a potential universal memory technology [6], [11], [17]; Phase-Change Memory (PCM) has already been shown to be a viable candidate for use in main memory [12], [16].”
RowHammer: A Retrospective (2019, background): “[202], [204], [245], [253], [254], [259], STT-MRAM [61], [137], and RRAM/ReRAM/memristors [246] are likely to exhibit similar and perhaps even more exacerbated reliability”
Memory scaling: A systems architecture perspective (2013, background): “Second, some emerging resistive memory technologies, such as phase change memory (PCM) [66, 73, 38, 39, 65] or spintransfer torque magnetic memory (STT-MRAM) [14, 36] appear more scalable, have latency and bandwidth characteristics much closer to DRAM than flash memory and hard disks, and are non-vo”