Low-power non-volatile spintronic memory: STT-RAM and beyond

By P. Amiri, Juan G. Alzate, Kang L. Wang. 2013

519 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b0486ba5d5b6c3e6b1a4949605e518c80a20f049

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Juan G. Alzate
2. Weisheng Zhao
3. Kang L. Wang
4. Jacques-Olivier Klein
5. Zhaohao Wang
6. Anders Eklund
7. Ahmad A. Awad
8. Ana Rusu

In Electronic, Optical and Magnetic Materials

1. Juan G. Alzate
2. Kang L. Wang
3. V. Joshi

In Materials Chemistry

1. Kang L. Wang
2. V. Joshi

Citations in the corpus

• Spin-Torque and Spin-Hall Nano-Oscillators (2015, background): “For more in-depth reviews of STTbased MRAM and STNOs, see [25], [26], [27], [28], [29]”
• Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque (2015, background): “Recently some experiments [5–9] demonstrated that spin-Hall effect (SHE) [10–12] and Rashba effect [13] can provide promising solutions to write the MTJ at higher speed and lower energy than conventional STT switching [14, 15].”
• Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling (2015, background): “, transistors) when integrated in a circuit, hence allowing for a much smaller overall cell area [5], [20].”