Efficiency droop in nitride‐based light‐emitting diodes

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Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting (2013, background): “A significant opportunity for efficiency improvement and cost reduction resides in finding a solution to “efficiency droop” [1].”
Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution” (2012, background): “This effect is known as the efficiency droop [9].”
Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes (2010, background): “In contrast, attempts to explain the droop by Auger losses have resulted in assumed Auger rates that vary by orders of magnitude for nominally fairly similar devices.(3) It has been observed experimentally that the efficiency droop is rather insensitive to the average defect density.”
MicroLED technologies and applications: characteristics, fabrication, progress, and challenges (2020, neutral): “The IQE of microLEDs can be expressed by a simple model [95]. where n is carrier concentration.”
ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review (2014, background): “Another high-current mechanism frequently discussed in literature is the electron leakage into p-side of an LED structure (Rozhansky and D. A. Zakheim 2006; Kim et al. 2007; Piprek 2010).”