Direct observation of conducting filaments on resistive switching of NiO thin films

By J. Son, Y. Shin. 2008

285 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/44622040e9855693c8cedfe8701497c4b954873c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. R. Bruchhaus
3. Rainer Waser
4. Zhaoping Liu
5. Xufeng Zhou
6. H. Philip Wong
7. Ilia Valov
8. Shimeng Yu

In Materials Chemistry

1. Rainer Waser
2. R. Bruchhaus
3. Daniele Ielmini

In Polymers and Plastics

1. R. Bruchhaus
2. Rainer Waser
3. Daniele Ielmini
4. H. Philip Wong

Citations in the corpus

• Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, background): “Although most studies reveal evidence for just one CF, there are reports which indicate that within NiO multifilamentary switching may occur [23,29].”
• Mechanism of nonvolatile resistive switching in graphene oxide thin films (2011, background): “A large variety of solid-state materials have been found to exhibit the RS effect, including solid electrolytes [5], complex perovskite oxides [1,6–10], binary oxides [11–18], organic materials [19], amorphous silicon [20], and amorphous carbon [21,22].”