BN/Graphene/BN Transistors for RF Applications

By Han Wang, T. Taychatanapat, A. Hsu, Kenji Watanabe, T. Taniguchi, P. Jarillo-Herrero, Tomas Palacios. IEEE Electron Device Letters, 2011

206 citations recorded by the source corpus.

In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0937b1a8dca76e762ab31151f91fb9c93365a458