Vertical Graphene Base Transistor
By W. Mehr, J. Dabrowski, J. Christoph Scheytt, Gunther Lippert, Yahong Xie, Max C. Lemme, Mikael Ostling, G. Lupina. IEEE Electron Device Letters, 2011
137 citations recorded by the source corpus.
We present a novel graphene-based-device concept for a high-frequency operation: a hot-electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows terahertz operation. Based on energy-band considerations, we propose a specific material solution that is compatible with SiGe process lines.
Subfields: Biomedical Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/a747f562f36884d862f65b96e66f424efef7926e
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Citations in the corpus
- Graphene Transistors: Status, Prospects, and Problems (2013, background): “The heart of this device is a graphene layer serving as the transistor’s base (in [145], the contact terminology of bipolar transistors is used) and sandwiched between an emitter-base and a base-collector insulator.”
- Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device (2016, unknown): “field enhancement by the tip (values of the field up to 107 V/cm can be achieved, as shown in Fig. 3d), the maximum built-in electric field at the Gr/Si junction29, is 𝐸à=√(2�𝑁|𝜙𝑖 | )⁄𝜀�𝑖≈3×105 �⁄�� (12) (𝑁=1018 ��−3 is the Si doping density,𝜙 𝑖≈0.3 � is the built-in potential and 𝜀�𝑖=12�”