Giant tunnel electroresistance for non-destructive readout of ferroelectric states
By Vincent Garcia, Stephane Fusil, K. Bouzehouane, S. Enouz-Védrenne, N. Mathur, A. Barthélémy, Manuel Bibes. Nature, 2009
854 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/3efbf08a26be1740a11e4029f73cc0ded29192dd
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Uwe Schroeder
- Thomas Mikolajick
- I. Fina
- Vincent Garcia
- J. MacManus‐Driscoll
- M. Lira-Cantú
- B. Dkhil
- G. Niklasson
In Materials Chemistry
- Ramamoorthy Ramesh
- J. Scott
- Manuel Bibes
- Uwe Schroeder
- Thomas Mikolajick
- G. Catalán
- Darrell Schlom
- Vincent Garcia
Citations in the corpus
- Ferroelectric tunnel junctions for information storage and processing (2014, methodology): “Highly strained ultrathin films of BaTiO 3 show large TER, of up to 750 for 3-nm-thick films, correlated with ferroelectricity by combining images of ferroelectric domains by piezoresponse force microscopy (PFM) and resistance maps of the domains with conductive-AFM (C-AFM) 30 .”
- Domain wall nanoelectronics (2012, background): “Recently, direct probing of polarizationcontrolled tunneling into a ferroelectric surface was shown (Garcia et al., 2009; Maksymovych et al., 2009).”
- Towards Oxide Electronics: a Roadmap (2019, background): “The corresponding resistance profiles are displayed underneath [316].”