Domain wall nanoelectronics

By G. Catalán, J. Seidel, Ramamoorthy Ramesh, J. Scott. 2012

973 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/440c367dba44c082885dc1e36834760339cf9439

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. A. Tagantsev
2. S. Cheong
3. Zhifeng Ren
4. G. Catalán
5. Jun-ming Liu
6. P. Zubko
7. S. Dong

In Electronic, Optical and Magnetic Materials

1. G. Catalán
2. A. Tagantsev
3. S. Dong
4. Zhifeng Ren
5. S. Cheong
6. Jun-ming Liu
7. P. Zubko
8. J. Scott

In Materials Chemistry

1. A. Tagantsev
2. S. Cheong
3. Zhifeng Ren
4. G. Catalán
5. Jun-ming Liu
6. P. Zubko
7. S. Dong
8. J. Scott

Citations in the corpus

• Multiferroic materials and magnetoelectric physics: symmetry, entanglement, excitation, and topology (2015, background): “Besides, BiFeO3 has been studied for its photovoltaic effect [24], photocatalytic effect [28], and fascinating role in domain wall nanoelectronics [29], all of which are associated with its prominent ferroelectricity.”
• Flexoelectric Effect in Solids (2013, background): “Flexoelectricity can also have dramatic consequences for the conductivity of domain walls—a topic which is currently generating an enormous amount of interest within the ferroelectrics community [86, 95].”