A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.
By Shoji Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. Gan, M. Endo, S. Kanai, J. Hayakawa, Fumihiro Matsukura, Hideo Ohno. Nature Materials, 2010
3,254 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/c36f38662a5d781dbefcf783f5d523be75d9af11
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In Atomic and Molecular Physics, and Optics
- M. Chshiev
- Bernard Dieny
- Pietro Gambardella
- Juan G. Alzate
- Kang L. Wang
- P. Amiri
- Weisheng Zhao
- Kevin Garello
In Electronic, Optical and Magnetic Materials
- Juan G. Alzate
- Kang L. Wang
- P. Amiri
- Pietro Gambardella
- Manuel Bibes
- Bernard Dieny
- M. Chshiev
- J. MacManus‐Driscoll
Citations in the corpus
- Skyrmion-electronics: writing, deleting, reading and processing magnetic skyrmions toward spintronic applications (2019, background): “Such a mechanism is different from the well-known giant magnetoresistance (GMR) [260], and tunnel magnetoresist ance (TMR) effect [261], which are dependent of local magnetization directions in two magnetic layers.”
- Roadmap for Emerging Materials for Spintronic Device Applications (2015, background): “It has also been reported that the CoFeB/MgO junction shows perpendicular magnetic anisotropy [76].”
- Spin-transfer torque RAM technology: Review and prospect (2012, methodology): “They also fabricated an MTJ with a diameter of 40 nm and measured Jc0 and D [24], as shown in Fig.”