Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

By Se-Chung Oh, Seungyung Park, A. Manchon, M. Chshiev, J. Han, Hyun-Woo Lee, Jang-eun Lee, K. Nam, Y. Jo, Y. Kong and 2 more. 2009

187 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d9a2786df3c44eb80981bbfb2a2d8de55d0ed050

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Pietro Gambardella
2. J. Sinova
3. T. Jungwirth
4. A. Manchon
5. I. Miron
6. A. Thiaville
7. Kevin Garello
8. J. Železný

In Condensed Matter Physics

1. J. Sinova
2. T. Jungwirth
3. Pietro Gambardella
4. I. Miron
5. Kevin Garello
6. J. Železný
7. A. Thiaville
8. Julie Grollier

In Materials Chemistry

1. J. Sinova
2. Pietro Gambardella
3. A. Manchon
4. T. Jungwirth
5. T. Dietl

Citations in the corpus

• Spin-torque building blocks. (2014, background): “6 junctions with asymmetric magnetic electrodes [44] [45], allowing the resistance to be increased or decreased at will, by controllably moving the domain wall to the left or to the right, depending on the current sign.”
• Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems (2018, background): “…process is thermally activated, a large overdrive current is required for fast 41 switching, which can damage the tunnel barrier, while the finite probability to not switch at high currents and to switch at low current leads to write error rates that are larger than desired (Oh et al., 2009).”
• Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities (2011, methodology): “Therefore we use asymmetric layer composition to obtain an asymmetric OOP field-like torque [26, 27].”