Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n-type GaN

By H. Cho, C. Kim, C. Hong. 2003

133 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3817914f6ef572af8afb2e8b9d9a38117626233d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Gaudenzio Meneghesso
2. Matteo Meneghini
3. Enrico Zanoni
4. Alessandro Chini
5. S. Karpov

In Electrical and Electronic Engineering

1. Matteo Meneghini
2. Gaudenzio Meneghesso
3. Enrico Zanoni
4. Alessandro Chini

In Materials Chemistry

1. S. Karpov

Citations in the corpus

• Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements (2014, background): “52 eV below the conduction band, whose properties can be extrapolated by tight bonding theory [15].”