Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution

By I. Inoue, S. Yasuda, H. Akinaga, H. Takagi. 2007

230 citations recorded by the source corpus.

Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and classic binary-transition-metal oxides (TMO), such as Fe2O3, NiO, and CoO. The sandwich exhibits a resistance that reversibly switches between two states: one is a highly resistive off-state and the other is a conductive on-state. Several distinct features were universally observed in these binary TMO sandwiches: namely, nonpolar switching, non-volatile threshold switching, and current--voltage duality. From the systematic sample-size dependence of the resistance in on- and off-states, we conclude that the resistance switching is due to the homogeneous/inhomogeneous transition of the current distribution at the interface.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/32a6c890380c2e77cadb9d248cf29e7608cfcebc

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In Electrical and Electronic Engineering

In Polymers and Plastics

Citations in the corpus

Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, background): “Some examples include TiO 2 , HfO 2 , Fe 2 O 3 , and CoO 14 , 15 .”