Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures

By F. Jiménez-Molinos, A. Palma, F. Gámiz, J. Banqueri, J. A. López-Villanueva. 2001

134 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/2dc077d8add8e85f5df4eb2be68e262009b3f429

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In Electrical and Electronic Engineering

1. Gennadi Bersuker
2. Luca Larcher
3. Luca Vandelli
4. Andrea Padovani
5. Daniele Ielmini

Citations in the corpus

• A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks (2011, background): “important to point out that the emission rate peaks at n = 0 and decreases exponentially with n, thus indicating that the electrons are typically emitted from the trap state with minimal phonon absorption [ 3 ].”