Using the chip as a temperature sensor — The influence of steep lateral temperature gradients on the Vce(T)-measurement
By R. Schmidt, U. Scheuermann. EPE, 2009
163 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/2cdadabda802948e719559a630feec943ce33379
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In Electrical and Electronic Engineering
- Frede Blaabjerg
- Marco Liserre
- U. Choi
- Zoubir Khatir
- Yvan Avenas
- Laurent Dupont
- Francesco Iannuzzo
- S. Munk‐Nielsen
Citations in the corpus
- Application of Kalman Filter to Estimate Junction Temperature in IGBT Power Modules (2016, background): “In [33], it is found that the temperature measured by the voltage drop VCE represents a weighted average of chip temperatures where the weighting vector is proportional to the current density such that areas on the chip with the highest current density and highest temperature dominate the measuremen”
- IGBT Junction Temperature Measurement via Peak Gate Current (2016, background): “In silicon devices, this parameter generally exhibits a negative temperature dependence of approximately −2 mV/°C, and numerous studies have shown that it provides a temperature close to the mean temperature of the chip [10], [11], [15].”
- Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress (2018, background): “VC E O N (I l ow ) [51], [63], [67], [79], [80] T Good linearity 2 mV/ °C in Silicon device Yes - Interrupt converter operation in AC power cycling test.”
- Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review (2012, methodology): “given by an IR camera and by the measurement of the voltage under a low current in the case of IGBT [19], [23], [47] or diodes [47].”
- Comparison of Junction Temperature Evaluations in a Power IGBT Module Using an IR Camera and Three Thermosensitive Electrical Parameters (2013, methodology): “They have been chosen because the area viewed by the IR camera is larger than that obtained with wire bonding [8].”