Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration

By Zheyu Zhang, Fred Wang, Leon M. Tolbert, B. Blalock. IEEE transactions on power electronics, 2014

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Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges (2019, background): “erties of SiC power devices are presented in [138].”
Overview of Silicon Carbide Technology: Device, Converter, System, and Application (2016, background): “To suppress cross-talk without sacrificing fast switching, several gate assist circuits were developed [102], [110]-[114].”
A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices (2020, methodology): “In [113], two assistive circuits were proposed to suppress the crosstalk effect due to the Miller capacitance: active Miller clamp circuit and gate voltage control circuit.”
Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET (2018, background): “Some works about impact factors on the switching performance have been conducted for LV SiC devices including signal isolator [33], parasitic [34], crosstalk issue [35], electromagnetic interference (EMI) [36], and impact of load [37], but these works have not been extended into HV SiC devices.”