Size-dependent resistivity of metallic wires in the mesoscopic range

By W. Steinhögl, G. Schindler, G. Steinlesberger, M. Engelhardt. 2002

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Evaluating the impact of resistance in carbon nanotube bundles for VLSI interconnect using diameter-dependent modeling techniques (2006, background): “is on the same order as the wire dimensions [2], [3].”
Electrical and thermal transport in metallic single-wall carbon nanotubes on insulating substrates (2006, background): “0026 K -1 , which is very near that of 40 nm diameter copper vias [44].”
Scaling analysis of multilevel interconnect temperatures for high-performance ICs (2005, methodology): “As temperature increases, increases linearly and decreases satisfying constant [ 16 ].”
Energy dissipation and transport in nanoscale devices (2010, background): “For instance, the electrical resistivity of Cu interconnects with line widths below 100 nm increases by more than a factor of two from the bulk Cu resistivity [130], and the resistivity for line widths near 40 nm was shown to increase by at least a factor of four [131, 132] at room temperature.”
Performance comparison between carbon nanotube and copper interconnects for gigascale integration (GSI) (2005, background): “The results offer important guidance regarding the nature of carbon nanotube technology development needed for improving interconnect performance.”