Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
By P. Waltereit, O. Brandt, A. Trampert, Holger Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K. Ploog. Nature, 2000
1,618 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials
View Paper: https://www.semanticscholar.org/paper/1b8918d493d42511ecafa2a416196386282659d6
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In Condensed Matter Physics
- Steven P. DenBaars
- Umesh K. Mishra
- M. Crawford
- Shuji Nakamura
- H. Masui
- A. I. Zhmakin
- T. Katona
- Asif Khan
In Electronic, Optical and Magnetic Materials
In Mechanics of Materials
Citations in the corpus
- Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges (2010, background): “eliminate the QCSE, which had a negative impact on nitride optoelectronic devices, nonpolar orientations suddenly began to attract attention [24], [25].”
- Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting (2013, background): “These planes facilitate device structures with high optical efficiency and enable the design flexibility to engineer a reduction in carrier density [12]–[14].”
- LEDs for Solid-State Lighting: Performance Challenges and Recent Advances (2009, background): “to these nontraditional crystal orientations affords the opportunity to greatly reduce, and even eliminate, polarization effects in wurtzite nitride materials [17], [18].”