Programmable computing with a single magnetoresistive element
By Rongchao Jin, Y. C. Cao, Encai Hao, G. S. Métraux, G. Schatz. Nature, 2003
382 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/178ea0119e4048e014b7d05ba01ff9976dd335b7
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In Atomic and Molecular Physics, and Optics
- Albert Fert
- Pietro Gambardella
- I. Miron
- Claude Chappert
- Kevin Garello
- M. Chshiev
- Bernard Dieny
- S. Auffret
In Electrical and Electronic Engineering
- Albert Fert
- Ian A. Young
- Claude Chappert
- Kevin Garello
- Pietro Gambardella
- Dmitri E. Nikonov
- I. Miron
- T. Jungwirth
Citations in the corpus
- The emergence of spin electronics in data storage. (2007, methodology): “MTJs can also be used for logic calculation, either directly [121] (a nice idea but its practical realization is uncertain), or by a dense integration of MTJs into CMOS logic circuits [122, 123] where they bring instant on/off, run time reprogrammability, and overall enhanced operation safety.”
- Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking (2013, background): “d FET [44]; magnetic domain-wall Logic [45]; domain wall majority gate logic [46]; MottFET [47]; spin Hall effect transistor [48]; few spin device [49]; magnetic tunnel junction (MTJ) plus CMOS logic [50,51,52,53]. We also do not cover the optoelectronic excitonic transistor, which was demonstrated ”
- Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions (2004, background): “is the key to developing magnetoresistive random-access-memory (MRAM), magnetic sensors and novel programmable logic device”
- Proposal of a Spin Torque Majority Gate Logic (2010, background): “have a spin degree of freedom involved in their operation: the Datta-Das spin modulator [4], the spin field-effect transistor [5], and the magnetic-tunnel-junction-based logic [6]–[9].”
- Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection (2011, background): “The ability to change the operation mode of a device is extremely valuable for programmable magnetic logic application”