Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

By I. Miron, Kevin Garello, Gilles Gaudin, P. Zermatten, M. Costache, S. Auffret, S. Bandiera, B. Rodmacq, A. Schuhl, Pietro Gambardella. Nature, 2011

2,720 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/3bde4fbad08948043c3d0c138f7a3302925046df

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Axel Hoffmann
2. T. Jungwirth
3. Pietro Gambardella
4. J. Sinova
5. A. Manchon
6. M. Chshiev
7. Bernard Dieny
8. I. Miron

In Electrical and Electronic Engineering

1. T. Jungwirth
2. A. Manchon
3. J. Sinova
4. Axel Hoffmann
5. Wanjun Jiang
6. S. Velthuis
7. Gong Chen
8. J. Zang

Citations in the corpus

• Efficient conversion of orbital Hall current to spin current for spin-orbit torque switching (2021, background): “R φ is expressed as21, R φ R B /B R∇ cosφ 2R B B /B cos φ cosφ , (2) where R and R are the 1st harmonic anomalous Hall and planar Hall resistances, respectively; B B is the damping-like (field-like) effective field; B is the effective magnetic field, including the demagnetization field and anisotrop”
• Spin-Torque and Spin-Hall Nano-Oscillators (2015, neutral): “It is thus possible to use the SHE in a nonmagnetic metal to achieve, in principle, all the STT-related functions—such as magnetic switching [19], [20] and driven magnetization precession [21], [22]—that previously required a separate magnetic layer to spin-polarize the charge current.”
• Spintronics and pseudospintronics in graphene and topological insulators. (2012, background): “At the time of writing, fewer potential applications have been identified for the more subtle spintronics effects that occur in non-magnetic conductors, like the materials that we will discuss here, although recent work on magnetization reversal induced by the spin Hall effect near heterojunctions b”
• Antiferromagnetic spintronics (2016, background): “The two IrMn antiferromagnetic layers are controlled via the exchange coupling by adjacent Pt/Co ferromagnetic multilayers with perpendicular magnetic anisotropy.”
• Spin-torque building blocks. (2014, background): “Several possibilities are currently considered and evaluated, such as thermally assisted switching [57], electric field effects on magnetization [58] [59] [60] and spin-orbit torques based on Rashba and/or spin Hall effects [61] [62].”