TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching

By M. Fujimoto, H. Koyama, M. Konagai, Y. Hosoi, K. Ishihara, S. Ohnishi, N. Awaya. 2006

210 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/123fb955a334333f56321dda29ac508b148389fa

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In Electrical and Electronic Engineering

1. Tseung-Yuen Tseng
2. Chenming Calvin Hu

In Materials Chemistry

1. Tseung-Yuen Tseng

Citations in the corpus

• Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory (2009, background): “The O2− are mainly accumulated at the interface between the electrode and the resistive layer due to localization effect of the electrode [13], [14].”
• Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices (2007, background): “All the measurements were performed at room temperature.”