Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration

By G. Lindström, M. Ahmed, S. Albergo, P. Allport, D. Anderson, L. Andricek, M. Angarano, V. Augelli, N. Bacchetta, P. Bartalini and 130 more. 2001

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Investigation of Irradiated Silicon Detectors by Edge-TCT (2010, methodology): “The device model using parameters extracted from measurements at lower fluences (data from CERN-RD48 [5], CERN-RD50 [6] collaborations) fails completely [7].”
The CMS experiment at the CERN LHC (2008, methodology): “The sensors are processed on n-doped DOFZ-silicon [24] with 〈111〉 orientation and a resistivity of about 3.”
The silicon microstrip sensors of the ATLAS semiconductor tracker (2007, methodology): “Furthermore, while the radiation induced currents fall with time [9], the behaviour of the effective doping concentration, Neff, (which determines depletion voltage) is more complicated [10].”
Review of displacement damage effects in silicon devices (2003, methodology): “of the RD48 work are given in [176], [177].”
Displacement Damage in Silicon Detectors for High Energy Physics (2018, positive): “Data of the RD48 collaboration taken from [45].”