40 Gbit/s silicon optical modulator for highspeed applications
By L. Liao, Ansheng Liu, D. Rubin, J. Basak, Y. Chetrit, Hat Nguyen, R. Cohen, N. Izhaky, Mario Paniccia. 2007
411 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/0ac55dce866cd93351a1c27b8064702ee42b2b97
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In Electrical and Electronic Engineering
- Wim Bogaerts
- John E. Bowers
- D. van Thourhout
- R. Baets
- Martijn J. R. Heck
- Goran Z. Mashanovich
- D. Thomson
- Frederic Y. Gardes
Citations in the corpus
- Hybrid Silicon Photonic Integrated Circuit Technology (2013, background): “Under reverse bias, bandwidths up to 30 GHz were shown [8]–[10].”
- 50-Gb/s Silicon Optical Modulator (2012, background): “Many demonstrations of modulation at around 10Gb/s have been reported from such structures [5-16] and a few at 40Gb/s [17-19].”
- Silicon-Organic Hybrid Electro-Optical Devices (2013, background): “This means that free carriers are either injected [39] or extracted [40] from a p-n/p-i-n-junction or capacitor located”
- Recent breakthroughs in carrier depletion based silicon optical modulators (2014, background): “Later 40 Gbit/s [20] modulation was produced albeit with an extinction ratio of only 1 dB.”
- Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies (2021, methodology): “junction and delivered a modulation efficiency of 4 V · cm and phase shifter loss of 18 dB∕cm.(106) Using a vertical P(I)N junction design, an athermal microdisk modulator with a high modulation efficiency of 250 pm∕V consuming 0.”
- Silicon optical modulators (2010, background): “The authors first reported data transmission at 30 Gb/s [65] but later improved this figure, demonstrating data transmission at 40 Gb/s, as shown in figure 3© [39].”
- Low-Voltage, Compact, Depletion-Mode, Silicon Mach–Zehnder Modulator (2010, background): “Silicon p-n junction modulators can, of course, be run in depletion mode, where carriers are extracted rather than injected [4]–[6] and high-speed operation (30 GHz) has been ob-”