Recent breakthroughs in carrier depletion based silicon optical modulators
By Graham T. Reed, Goran Z. Mashanovich, Frederic Y. Gardes, M. Nedeljkovic, Youfang Hu, D. Thomson, Ke Li, P. Wilson, Shen-Wen Chen, S. Hsu. 2014
216 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/c2d6ea85cd34e625b636d65a42768f6ca701dcb4
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In Electrical and Electronic Engineering
Citations in the corpus
- Graphene–silicon phase modulators with gigahertz bandwidth (2017, background): “However, the Si free-carrier effect in the depleted p-n junction[4] typically requires mm-size devices for accumulating a π -phase shift[8] with a 1-3V driving voltage.”
- Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies (2021, unknown): “into or out of a waveguide results in phase modulation of the optical signal.(21,49,61) Phase modulation is translated into”