50-Gb/s Silicon Optical Modulator
By D. Thomson, Frederic Y. Gardes, J. Fédéli, S. Zlatanović, Youfang Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, Goran Z. Mashanovich and 1 more. IEEE Photonics Technology Letters, 2012
421 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/a54268a76778ba85c575197b201620d83516fa98
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In Electrical and Electronic Engineering
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Citations in the corpus
- Heterogeneously integrated III–V/Si MOS capacitor Mach–Zehnder modulator (2017, background): “Phase shifter Si MMI (1) Si waveguide (2) InGaAsP taper (3) InGaAsP/Si taper (4) InGaAsP/Si MOS capacitor a”
- Silicon photonic integration in telecommunications (2015, background): “Such a modulator can operate at over 50 Gb/s [17], but has a high background insertion loss.”
- Silicon-Organic Hybrid Electro-Optical Devices (2013, background): “with bandwidths of up to 50 GHz have been demonstrated [44].”
- Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies (2021, neutral): “8 V · cm and an IL of 4 dB for a 1-mm-long phase shifter.(16) By further optimizing the implementation of self-aligned PN junctions,(74) a demonstration provided an ∼1 dB∕mm loss without compro-”
- Recent breakthroughs in carrier depletion based silicon optical modulators (2014, methodology): “In a different variant of the device modulation at 40 Gbit/s with 10 dB extinction ratio [40] and 50 Gbit/s with a 3 dB extinction ratio [41] has been demonstrated from 3.”
- Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits (2017, positive): “For high-speed operation, depletion-type modulators using reversebiased PN junction are preferred and speeds of up to 50 Gb/s have been demonstrated [98].”
- Silicon Photonics: The Next Fabless Semiconductor Industry (2013, positive): “With traveling-wave designs, data rates of up to 50 Gb/s have been experimentally demonstrated [42], [43].”