Solid-State Transformer and MV Grid Tie Applications Enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs Based Multilevel Converters

By S. Madhusoodhanan, A. Tripathi, D. Patel, K. Mainali, A. Kadavelugu, S. Hazra, S. Bhattacharya, K. Hatua. IEEE transactions on industry applications, 2015

324 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/aef5f4e917659ff0e169cb6c51c2f6cbd67152f1

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In Electrical and Electronic Engineering

1. J. Morrow
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4. Alex Q. Huang
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Citations in the corpus

• Medium-Voltage Solid-State Transformer: Technology for a Smarter and Resilient Grid (2016, background): “15-kV SiC IGBT [29] 12-kV SiC IGBT [28]”
• A Gate Drive With Power Over Fiber-Based Isolated Power Supply and Comprehensive Protection Functions for 15-kV SiC MOSFET (2016, background): “To date, 10- and 15-kV SiC MOSFETs [1]–[3], 13-kV p-i-n diode [4], 15-kV SiC IGBTs [5]– [13], and 16-kV n-channel insulated-gate bipolar transistor (IGBT) [4] have been developed and demonstrated.”
• A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications (2021, background): “At present, the SiC IGBT is still packaged in the wire-bonding module [2], [10], [13], [52], in which the failure of bonding wires”
• Isolated and Nonisolated DC-to-DC Converters for Medium-Voltage DC Networks: A Review (2020, background): “Furthermore, the need for active gate-driving or snubber circuits that can be used to achieve the static and dynamic balances of voltage sharing is unavoidable to reduce high switching losses [25]–[27].”